Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices |
SINGLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10.5 dB |
e0 |
700 MHz |
1200 MHz |
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|
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
11 dB |
e3 |
1700 MHz |
3000 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
27 dBm |
3 mA |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
12 dB |
10000 MHz |
26000 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
12 dB |
10000 MHz |
26000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
13 dB |
5000 MHz |
12000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
13 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
13.5 dB |
e4 |
14000 MHz |
21000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
12 dB |
10000 MHz |
26000 MHz |
||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
10.5 dB |
e0 |
5000 MHz |
12000 MHz |
|||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
SINGLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
1700 MHz |
3000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
18 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
12.5 dB |
14000 MHz |
32000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
12 dB |
e3 |
2400 MHz |
4000 MHz |
||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
IMAGE REJECTION |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
10.5 dB |
e4 |
5900 MHz |
12000 MHz |
|||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
3/4 |
LCC6,.2SQ,40 |
50 ohm |
85 Cel |
-40 Cel |
12 dB |
20000 MHz |
30000 MHz |
|||||||||
|
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
Matte Tin (Sn) |
e3 |
||||||||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
10.5 dB |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10.5 dB |
e0 |
5000 MHz |
12000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
4 |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
13 dB |
5000 MHz |
12000 MHz |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
700 MHz |
2000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
11 dB |
e4 |
17000 MHz |
31000 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
14 dB |
SMA |
14500 MHz |
19500 MHz |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
14 dB |
e4 |
14000 MHz |
20000 MHz |
||||||||||||
Analog Devices |
DOUBLE BALANCED |
13 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TIN LEAD |
10 dB |
e0 |
4500 MHz |
9000 MHz |
|||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
10 dB |
e0 |
1500 MHz |
4500 MHz |
|||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
70 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
11 dB |
HIGH ISOLATION |
e0 |
1700 MHz |
4000 MHz |
||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
COMPONENT |
3.3/5 |
LCC36,.25SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
HIGH ISOLATION |
500 MHz |
1700 MHz |
||||||||
Analog Devices |
DOUBLE BALANCED |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
10 MHz |
3000 MHz |
||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
11000 MHz |
16000 MHz |
||||||||||||
Analog Devices |
IMAGE REJECTION |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
10 dB |
e4 |
8500 MHz |
13500 MHz |
|||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
11 dB |
e0 |
1700 MHz |
2200 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
COMPONENT |
3.3/5 |
LCC36,.25SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
HIGH ISOLATION |
e3 |
1200 MHz |
2500 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
12 dBm |
95 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
400 MHz |
1200 MHz |
|||||
Analog Devices |
DOUBLE BALANCED |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
12 dB |
e0 |
700 MHz |
1400 MHz |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
200 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
9.5 dB |
e4 |
6000 MHz |
10000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) |
11 dB |
e4 |
54000 MHz |
64000 MHz |
|||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10 dB |
e0 |
1700 MHz |
4500 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
450 MHz |
500 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.