Laser Diodes

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Part RoHS Manufacturer Optoelectronic Type Mounting Feature Terminal Finish Configuration Size No. of Functions Maximum Forward Current Peak Wavelength (nm) Packing Method Maximum Response Time Sub-Category Semiconductor Material Maximum Operating Temperature Shape Maximum Threshold Current Minimum Operating Temperature Nominal Output Power Additional Features Spectral Bandwidth JESD-609 Code Maximum Forward Voltage

TOLD321BAB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD320B

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1300

.0000000005 s

Laser Diodes

InGaAs

65 Cel

-10 Cel

3 m

1.5 V

TOLD158

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.095 A

810

Laser Diodes

50 Cel

-10 Cel

TOLD135

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD9215(S)

Toshiba

LASER DIODE

1

670

10 W

TOLD159

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

810

Laser Diodes

50 Cel

-10 Cel

TOLD320CCB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD322CCC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD173

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD128

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.085 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD9201(S)

Toshiba

LASER DIODE

1

670

5 W

TOLD320AAB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

1.5 V

TOLD321BAC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD320CCA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD110

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

780

Laser Diodes

GaAlAs

60 Cel

-10 Cel

e0

TOLD123R

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.08 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD321BBC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD151R

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.095 A

810

Laser Diodes

50 Cel

-10 Cel

TOLD323BBB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD310

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.0000000003 s

Laser Diodes

65 Cel

-10 Cel

1.5 V

TOLD350B

Toshiba

LASER DIODE

SURFACE MOUNT

.15 A

1550

.0000000005 s

Laser Diodes

InGaAs

70 Cel

-15 Cel

4 m

1.5 V

TOLD9211M

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

1

670

Laser Diodes

50 Cel

-10 Cel

5 W

TOLD322CCB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD323BBA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

2 V

TOLD322BCC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD70

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

.15 A

1200

.0000000005 s

Laser Diodes

InGaAs

50 Cel

0 Cel

2 m

e0

TOLD124

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.08 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD9443SD

Toshiba

LASER DIODE

SINGLE WITH BUILT-IN PHOTO DIODE

1.6 mm

1

650

ROUND

65 mA

10 W

TOLD9200(F)

Toshiba

LASER DIODE

1

670

3 W

TOLD9231MTR

Toshiba

LASER DIODE

SINGLE WITH BUILT-IN PHOTO DIODE

1.8 mm

1

670

60 Cel

ROUND

75 mA

-10 Cel

5 W

TOLD322AAA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

1.5 V

TOLD322BCB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

1.5 V

TOLD320CBB

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

70 Cel

-10 Cel

1.5 V

TOLD322BAC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

1.5 V

TOLD321AAA

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD323ACC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

80 Cel

-30 Cel

2 V

TOLD9111(S)

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

1

680

Laser Diodes

60 Cel

-10 Cel

5 W

TOLD350

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1550

.0000000003 s

Laser Diodes

InGaAs

70 Cel

-15 Cel

15 V

TOLD134R

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.115 A

830

Laser Diodes

50 Cel

-10 Cel

TOLD122

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.085 A

780

Laser Diodes

50 Cel

-10 Cel

TOLD9321(F)

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

660

Laser Diodes

GaAlInP

50 Cel

-10 Cel

TOLD9462MD

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

SINGLE WITH BUILT-IN PHOTO DIODE

1.8 mm

1

650

Laser Diodes

InGaAlP

70 Cel

ROUND

40 mA

-10 Cel

7 W

TOLD9150(S)

Toshiba

LASER DIODE

1

690

30 W

TOLD9462MC(TR)

Toshiba

TOLD2001MDA

Toshiba

LASER DIODE

COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE

1.8 mm

1

790

ROUND

55 mA

10 W

TOLD157

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.095 A

810

Laser Diodes

50 Cel

-10 Cel

TOLD321CAC

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1310

.000000001 s

Laser Diodes

InGaAs

65 Cel

0 Cel

2 V

TOLD383S

Toshiba

LASER DIODE

THROUGH HOLE MOUNT

.15 A

1550

.0000000003 s

Laser Diodes

60 Cel

10 Cel

.0015 V

Laser Diodes

Laser diodes are electronic devices that emit a coherent and monochromatic beam of light through the process of stimulated emission. Laser diodes are commonly used in a wide range of applications, including telecommunications, medical equipment, and industrial manufacturing.

Laser diodes are similar in structure to regular diodes but are designed to emit light instead of electrical current. They consist of a semiconductor material, typically gallium arsenide, which is doped with impurities to create a p-n junction. When a voltage is applied across the p-n junction, it causes electrons to move from the n-type region to the p-type region, releasing energy in the form of photons.

Laser diodes are characterized by their high efficiency, small size, and ability to produce a narrow and intense beam of light. They are used in a wide range of applications, including fiber-optic communications, optical storage devices, and laser printers.