Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
320 mA |
8192 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQCC-J68 |
5.5 V |
4.57 mm |
24.2062 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP |
e3 |
30 |
260 |
24.2062 mm |
20 ns |
|||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
95 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
9 mm |
Not Qualified |
8388608 bit |
2.4 V |
e1 |
30 |
260 |
.02 Amp |
11 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
3 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.2 V |
e3 |
20 |
260 |
YES |
.000007 Amp |
20.95 mm |
45 ns |
||||||||||
|
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T24 |
5.5 V |
9.65 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
YES |
.003 Amp |
34.545 mm |
||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
Defense Logistics Agency |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
CHIP CARRIER |
125 Cel |
32KX8 |
32K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
Qualified |
262144 bit |
4.5 V |
e0 |
25 ns |
|||||||||||||||||||||||||||
Defense Logistics Agency |
STANDARD SRAM |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
125 Cel |
32KX8 |
32K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
3.048 mm |
11.43 mm |
Qualified |
262144 bit |
4.5 V |
e0 |
13.97 mm |
55 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
2.2 V |
e1 |
20 |
260 |
.00002 Amp |
8 mm |
45 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
175 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2 V |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
e3 |
20 |
260 |
.025 Amp |
22.415 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.04 Amp |
20.995 mm |
20 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 mA |
131072 words |
COMMON |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.2 V |
e4 |
20 |
260 |
.000003 Amp |
11.8 mm |
45 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3.15 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
1048576 bit |
3.15 V |
e3 |
30 |
260 |
YES |
.01 Amp |
18.41 mm |
20 ns |
||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
52 mA |
131072 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP32,.4 |
SRAMs |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
2.54 mm |
7.5 mm |
Not Qualified |
1048576 bit |
2.7 V |
e3 |
20 |
260 |
.005 Amp |
20.726 mm |
45 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.2 V |
e3 |
20 |
260 |
YES |
.000008 Amp |
18.4 mm |
45 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
45 mA |
262144 words |
COMMON |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
100 MHz |
10.16 mm |
4194304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.008 Amp |
18.415 mm |
10 ns |
||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
3 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
230 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
e3 |
30 |
260 |
.006 Amp |
14 mm |
20 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
45 mA |
262144 words |
COMMON |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
4194304 bit |
4.5 V |
260 |
YES |
.008 Amp |
18.415 mm |
10 ns |
||||||||||||||||
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
275 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
Matte Tin (Sn) |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.07 Amp |
20 mm |
3.4 ns |
|||||||||||
|
Infineon Technologies |
QDR II SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
750 mA |
4194304 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
1.7 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
300 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V |
e1 |
20 |
260 |
15 mm |
.45 ns |
|||||||||||
|
Infineon Technologies |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
530 mA |
2097152 words |
COMMON |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
250 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
15 mm |
.45 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
14 mm |
20 ns |
||||||||||||||||||||||
Defense Logistics Agency |
STANDARD SRAM |
MILITARY |
22 |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
IN-LINE |
125 Cel |
16KX4 |
16K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T22 |
Qualified |
65536 bit |
e0 |
55 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.04 Amp |
20.995 mm |
15 ns |
||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
8388608 bit |
2.7 V |
40 |
260 |
18.415 mm |
10 ns |
|||||||||||||||||||||||
Defense Logistics Agency |
SRAM MODULE |
MILITARY |
QFP |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
32 |
FLATPACK |
1.27 mm |
125 Cel |
512KX32 |
512K |
-55 Cel |
TIN LEAD |
QUAD |
5.5 V |
5.08 mm |
22.352 mm |
Qualified |
16777216 bit |
4.5 V |
e0 |
22.352 mm |
17 ns |
|||||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
3 V |
e1 |
20 |
260 |
.01 Amp |
8 mm |
10 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
SOJ44,.44 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
3 V |
e1 |
20 |
260 |
.01 Amp |
8 mm |
10 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
2.6 V |
1.5 mm |
133 MHz |
17 mm |
Not Qualified |
9437184 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.02 Amp |
17 mm |
15 ns |
||||||||||
|
Microchip Technology |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
65536 words |
COMMON |
8 |
SMALL OUTLINE |
SOP8,.23 |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
2.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G8 |
1 |
5.5 V |
1.75 mm |
20 MHz |
3.9 mm |
524288 bit |
2.5 V |
e3 |
40 |
260 |
NO |
.00001 Amp |
4.9 mm |
||||||||||||||
|
Infineon Technologies |
QDR SRAM |
INDUSTRIAL |
361 |
HBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
1.3 |
36 |
GRID ARRAY, HEAT SINK/SLUG |
1 mm |
85 Cel |
4MX36 |
4M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B361 |
3 |
1.34 V |
2.765 mm |
21 mm |
150994944 bit |
1.26 V |
e1 |
21 mm |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.04 Amp |
20.995 mm |
20 ns |
||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
3 |
8 |
SMALL OUTLINE |
SOP32,.56 |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G32 |
3 |
5.5 V |
2.997 mm |
11.303 mm |
1048576 bit |
2.7 V |
LG_MAX |
YES |
.00003 Amp |
20.75 mm |
55 ns |
||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
1.4 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
2.7 V |
e4 |
20 |
260 |
.000006 Amp |
17.9324 mm |
70 ns |
||||||||||||
|
Infineon Technologies |
PSEUDO STATIC RAM |
TIN SILVER COPPER |
3 |
e1 |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-GDIP-T28 |
1 |
5.5 V |
5.08 mm |
15.24 mm |
Qualified |
262144 bit |
4.5 V |
e0 |
240 |
YES |
.0008 Amp |
37.211 mm |
55 ns |
|||||||||||
|
Microchip Technology |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100; TS 16949 |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
131072 words |
COMMON/SEPARATE |
5 |
8 |
SMALL OUTLINE |
SOP8,.23 |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G8 |
5.5 V |
1.75 mm |
20 MHz |
3.9 mm |
1048576 bit |
2.5 V |
e3 |
NO |
.00001 Amp |
4.9 mm |
|||||||||||||||
|
Integrated Silicon Solution |
PSEUDO STATIC RAM |
INDUSTRIAL |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
GRID ARRAY, THIN PROFILE |
1 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
1.95 V |
1.2 mm |
6 mm |
67108864 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
|||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
36 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
8 |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
30 |
260 |
YES |
.000016 Amp |
8 mm |
45 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 mA |
131072 words |
COMMON |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.2 V |
e3 |
20 |
260 |
.000003 Amp |
18.4 mm |
45 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.04 Amp |
20.995 mm |
15 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
260 |
18.4 mm |
45 ns |
||||||||||||||||||||||
|
Microchip Technology |
STANDARD SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
10 mA |
131072 words |
SEPARATE |
3/5 |
8 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T8 |
5.5 V |
5.334 mm |
20 MHz |
7.62 mm |
Not Qualified |
1048576 bit |
2.5 V |
e3 |
NO |
.00001 Amp |
9.271 mm |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
2.6 V |
1.5 mm |
133 MHz |
17 mm |
Not Qualified |
9437184 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.02 Amp |
17 mm |
15 ns |
||||||||||
|
Alliance Memory |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3.3 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX16 |
64K |
0 Cel |
DUAL |
R-PDSO-J44 |
3 |
3.6 V |
3.7592 mm |
10.16 mm |
1048576 bit |
3 V |
e3/e6 |
28.575 mm |
12 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-J36 |
3 |
3.6 V |
3.7592 mm |
10.16 mm |
4194304 bit |
2.2 V |
40 |
260 |
23.495 mm |
10 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.