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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71V416S10PHG	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	10 ns
CY7C1399BN-12VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm		7.5057 mm	Not Qualified	262144 bit	3 V		e4	30	260		.0005 Amp	17.907 mm	12 ns
AS6C1008-55PCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3	3/5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	1.5 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T32	3	5.5 V	3.937 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V		e3	30	245		.000001 Amp	41.91 mm	55 ns
7005L20JGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER				1.27 mm	85 Cel			8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68	3	5.5 V			24.2062 mm		65536 bit	4.5 V		e3	NOT SPECIFIED	260			24.2062 mm	20 ns
CY62128EV30LL-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.2 V		e4	30	260		.000003 Amp	18.4 mm	45 ns
CY62167EV30LL-45BVIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V	IT ALSO OPERATES AT 2.2V TO 3.6V	e0		260			8 mm	45 ns
IS61WV51216EDBLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	2 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.4 V						.015 Amp	18.41 mm	10 ns
M48Z58Y-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	70 ns
CY14B256LA-SZ25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V			20	260		.005 Amp	20.726 mm	25 ns
IDT71V416S15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	15 ns
N25S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.1 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.000004 Amp	4.4 mm
7028L20PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	65536 words	COMMON	5		16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20			.5 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V		e3	NOT SPECIFIED	260	YES	.003 Amp	14 mm	20 ns
CY14V116N-BZ30XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V		e1		260			17 mm	30 ns
CY62138FV30LL-45ZAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
DS1245Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	85 Cel			128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		70 ns
DS1245Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		70 ns
DS1245Y-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	85 Cel			128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDIP-P32	1	5.5 V	10.922 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3				.0006 Amp	43.053 mm	70 ns
23LCV1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.9 mm
CY7C199D-10VXIT	Infineon Technologies	STANDARD SRAM		28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34			1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5057 mm		262144 bit	4.5 V		e4	30	260	YES	.003 Amp	17.907 mm	10 ns
CY7C1049G30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel			512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V				260			23.495 mm	10 ns
IDT70T3519S133BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.02 Amp	17 mm	15 ns
23A1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE		1.8/2	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	1.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	2.2 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	1.7 V		e3	40	260	NO	.000004 Amp	4.9 mm
IDT70V24L20PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	4096 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	4KX16	4K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e3	30	260		.005 Amp	14 mm	20 ns
5962-8685924YA	Defense Logistics Agency	OTHER SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				2.54 mm	125 Cel			16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0					27.555 mm	35 ns
CY62128ELL-45ZAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
IDT71342LA55PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	30	240	YES	.004 Amp	14 mm	55 ns
IDT71V016SA20PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e3	30	260		.01 Amp	18.41 mm	20 ns
R1LV1616HSA-4SI#B1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.7 V	ALSO ORGANISED AS 2MX8				YES	.000008 Amp	18.4 mm	45 ns
23LC512-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	524288 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.9 mm
70V24L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	4096 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	4KX16	4K	3 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e3	30	260		.005 Amp	14 mm	20 ns
CY14V101LA-BA45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3 V		e1	30	260		.008 Amp	10 mm	45 ns
CY7C1041G-10ZSXIT	Infineon Technologies	STANDARD SRAM		44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	5		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm	100 MHz	10.16 mm		4194304 bit	4.5 V		e4		260	YES	.008 Amp	18.415 mm	10 ns
23K256T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	262144 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.9 mm
23LC1024-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	20 MHz	3 mm	Not Qualified	1048576 bit	2.5 V		e3		260	NO	.00001 Amp	4.4 mm
DS1245Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	70 Cel			128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T32	1	5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		70 ns
DS1245Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel			128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDIP-P32	1	5.5 V	10.922 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e3				.0006 Amp	43.053 mm	70 ns
5962-8855202XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	125 Cel		3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm		15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	70 ns
71V416S15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	15 ns
IS62WV51216BLL-55TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.5 V		e3	30	260		.00002 Amp	18.415 mm	55 ns
IS66WVE4M16EALL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	NO	3-STATE	4MX16	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V		e1		260	NO	.00015 Amp	8 mm	70 ns
CY62157ESL-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.2 V	IT ALSO OPERATES AT 5V SUPPLY	e4	20	260		.000005 Amp	18.415 mm	45 ns
APS6404L-3SQR-ZR	Ap Memory Technology	HYPERRAM		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	7 mA	835584 words		3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			.5 mm	85 Cel			8MX8	8M		-25 Cel		DUAL	1	R-PDSO-N8		3.6 V	.5 mm	133 MHz	2 mm		67108864 bit	2.7 V						.00025 Amp	3 mm
AS7C34098A-10TINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			256KX16	256K		-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		e3/e6					18.415 mm	10 ns
CY14B101LA-ZS45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel			128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	45 ns
CY62148ELL-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	SOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	20	260	YES	.000007 Amp	20.95 mm	45 ns
7005L20JGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	320 mA	8192 words		5		8	CHIP CARRIER				1.27 mm	85 Cel			8KX8	8K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J68	3	5.5 V			24.2062 mm		65536 bit	4.5 V		e3	NOT SPECIFIED	260			24.2062 mm	20 ns
70T3519S133BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel		3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.02 Amp	17 mm	15 ns
CY62158EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX8	1M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	8388608 bit	2.2 V		e1	20	260		.000005 Amp	8 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.