Vishay Semiconductors - TEFD4300F

PIN PHOTODIODE; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Light Current: .0016 mA; Minimum Reverse Breakdown Voltage: 40 V; Minimum Operating Temperature: -40 Cel;

AVALANCHE PHOTODIODE;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Reverse Breakdown Voltage: 24.2 V; Configuration: COMPLEX; Additional Features: LOW NOISE; Semiconductor Material: Silicon;

Infineon's BP104FS is a PIN photodiode with -40 to 80°C operating range, 30nA dark current, and 20V reverse voltage. Ideal for surface mount applications, it offers fast response time of 0.00000002s making it suitable for light sensing in various electronic devices.

PIN PHOTODIODE; Peak Wavelength (nm): 850; Minimum Reverse Breakdown Voltage: 50 V; Maximum Dark Current: 10 nA; Infrared (IR) Range: YES; Configuration: SINGLE;

Vishay Intertechnology's VEMD2020X01 is a 1.8mm PIN photodiode with peak wavelength of 940nm. It operates b/w -40 to 100°C, has a reverse breakdown voltage of 32V, and max dark current of 10nA. Ideal for IR applications, it features surface mounting and matte tin terminal finish.

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 4 nA; JESD-609 Code: e0;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; Additional Features: DAYLIGHT FILTER; Shape: RECTANGULAR;

The Vishay Intertechnology TEMD5010X01 is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 60V. Ideal for IR applications, it has nominal light current of 0.05mA and max dark current of 30nA.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Semiconductor Material: Silicon; Maximum Dark Current: .05 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 32 V; Semiconductor Material: Silicon; Maximum Response Time: .00000035 s; Maximum Dark Current: 2 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Configuration: SINGLE; Size: 5 mm; Minimum Operating Temperature: -40 Cel;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Maximum Reverse Voltage: 32 V; No. of Functions: 1; Semiconductor Material: Silicon;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -30 Cel; Semiconductor Material: Silicon;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Dark Current: 10 nA; Maximum Reverse Voltage: 30 V; Maximum Operating Temperature: 85 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN NICKEL; Maximum Dark Current: 5 nA; Configuration: SINGLE; Maximum Response Time: .00000001 s;

MICROFJ-60035-TSV-TR1 by Onsemi is a 6.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in detecting light signals.

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Semiconductor Material: Silicon; JESD-609 Code: e0;