Toshiba - TPS615(A,F)

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Configuration: SINGLE; Additional Features: HIGH SENSITIVITY; Size: 5 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Shape: ROUND; Maximum Operating Temperature: 85 Cel; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Shape: ROUND; Size: 1.6 mm; No. of Functions: 1;

SMD2440-002 by Honeywell Sensing And Control is a single configuration phototransistor with a peak wavelength of 880nm. It operates in temperatures ranging from -55 to 125 °C and has a max power dissipation of 0.125W. It is commonly used for optoelectronic applications requiring infrared range detection.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Power Dissipation: .3 W; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Maximum On State Current: .05 A; Maximum Dark Current: 200 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 780; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Size: 1.8 mm; No. of Functions: 1; Configuration: SINGLE; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 35 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Peak Wavelength (nm): 800; Nominal Light Current: .2 mA; Maximum On State Current: .05 A;

OP520 by Tt Electronics Plc is a phototransistor with peak wavelength of 935nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and max on state current of 0.02A. Ideal for surface mount applications requiring high sensitivity in optoelectronics.

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel; Shape: ROUND;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 20 V; Nominal Light Current: .04 mA; Additional Features: DOUBLE END; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .07 W; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 880;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Power Dissipation: .05 W; Additional Features: TTL COMPATIBLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;