Toshiba - TPS614(F)

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Size: 3.1 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Peak Wavelength (nm): 800; Nominal Light Current: .2 mA; Maximum On State Current: .05 A;

PHOTO TRANSISTOR; Size: 1.5 mm; Additional Features: SIDE VIEW; Peak Wavelength (nm): 870; Shape: ROUND; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .075 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .025 A; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000006 s; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Peak Wavelength (nm): 950; Maximum Response Time: .000002 s;

PHOTO TRANSISTOR; Size: 3 mm; Maximum Operating Temperature: 75 Cel; Minimum Collector-emitter Breakdown Voltage: 20 V; Shape: ROUND; Peak Wavelength (nm): 720;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000009 s; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .016 mA; JESD-609 Code: e0; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 4; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 860; Maximum Dark Current: 200 nA; Maximum On State Current: .015 A; Maximum Response Time: .000005 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 930; No. of Functions: 1; Configuration: SINGLE;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 840;

PHOTO DARLINGTON; Nominal Light Current: 1.7 mA; Shape: ROUND; Maximum Dark Current: 250 nA; Size: 1.5 mm; Peak Wavelength (nm): 870;

BPX86 by Infineon Technologies is a phototransistor with max operating temp of 85°C and min operating temp of -40°C. It has a max dark current of 200nA and response time of 0.000008s. Ideal for applications requiring through hole mounting, such as light sensing in various electronic devices.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 40 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 125 Cel; Additional Features: HIGH SENSITIVITY;