Toshiba - TOLD100

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: 11 A; Nominal Output Power: 5000 W; Minimum Operating Temperature: 5 Cel; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000001 s; Maximum Forward Current: .15 A;

LASER DIODE; Spectral Bandwidth: 4 m; Semiconductor Material: InGaAs/GaAs; Peak Wavelength (nm): 808;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .095 A; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 640; Semiconductor Material: AlGaInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Maximum Response Time: .00000000004 s; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1531;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .15 A; JESD-609 Code: e0;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .055 A; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000005 s;

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1587; Semiconductor Material: InGaAsP;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 65 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 1330; Spectral Bandwidth: 5 m; Minimum Operating Temperature: -40 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .095 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAs; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .000000001 s;

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1563; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .025 A; Maximum Operating Temperature: 40 Cel; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 3 V; Maximum Forward Current: .11 A; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; Peak Wavelength (nm): 830; JESD-609 Code: e0;

Laser Diodes;