Toshiba - TC511000BFTL-70

Micron Technology's MT48LC16M16A2P-75IT:D is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package for space-constrained designs.

DDR4 DRAM MODULE; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Ports: 1; Technology: CMOS;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Width: 6 mm; Technology: CMOS;

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.

MT47H128M8JN-3IT:H by Micron Technology is a DDR2 DRAM with 128MX8 organization and 1.8V nominal voltage. It operates synchronously at a max clock frequency of 333 MHz and is commonly used in industrial applications requiring high memory density and fast access times.

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

IS42S16160G-7BLI by Integrated Silicon Solution is a 16MX16 SYNCHRONOUS DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals in a GRID ARRAY package style, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high-speed memory performance.

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Words Code: 8M; Package Body Material: PLASTIC/EPOXY;

IS42S16800F-6TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports self-refresh mode. Ideal for industrial applications requiring fast memory access and low standby current consumption.

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Micron Technology's MT40A1G16KH-062EAUT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

Micron Technology's MT41K512M16HA-125AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

CACHE DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;