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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SC2639 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 3.5 A; Maximum Operating Temperature: 175 Cel; |
| Datasheet | 2SC2639 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 10.6 dB |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 3.5 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 10 |
| No. of Terminals: | 4 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 35 W |
| Maximum Collector-Emitter Voltage: | 17 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Collector-Base Capacitance: | 80 pF |
| Maximum Power Dissipation Ambient: | 35 W |
