STMicroelectronics - M29F200BB50M3T

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Boot Block: BOTTOM;

Samsung's KLM8G1GETF-B0410 is a 8GX8 MLC NAND flash memory with 68719476736 bit density. Operating at 200 MHz, it has a very thin profile and fine pitch package style suitable for high-speed applications. With a voltage range of 1.7V to 1.95V, this CMOS technology chip is ideal for devices requiring fast data storage and retrieval.

S29GL128P11FFI010 by Infineon is a 128Mx1 NOR flash memory with 128 sectors, operating at 3V. It features a parallel interface, 110ns access time, and supports common flash interface. Ideal for industrial applications requiring fast data access and reliable storage in a compact grid array package.

Micron Technology's MT25QU512ABB1EW9-0SIT is a 512M NOR flash memory with 536870912-bit density. Operating at 166 MHz, it has a supply voltage range of 1.7V to 2V and temperature tolerance from -40°C to 85°C. Ideal for industrial applications requiring high-speed synchronous operation in small outline packages.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VSON; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

SST26VF016BT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring 100000 write/erase cycles, with -40 to 85°C temp range and AEC-Q100 screening level.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

S29JL032J70TFI310 by Infineon Technologies is a 2MX16 NOR flash memory with 3V nominal voltage. It features synchronous operation, 8K/64K sector size, and 70ns max access time. Ideal for industrial applications requiring fast data retrieval and reliable non-volatile storage in compact designs.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm;

EPCS1SI8N by Intel is a 128Kx8 configuration memory with 1048576-bit memory density. It operates at a max clock frequency of 40 MHz and has an endurance of 100,000 write/erase cycles. This flash memory chip is ideal for industrial applications requiring reliable and high-speed data storage.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20;

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Power Supplies (V): 5;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

S25FL128LAGMFM010 by Infineon Technologies is a 16MX8 NOR type flash memory with 133 MHz clock frequency. Operating at -40 to 125 °C, it offers 100000 write/erase cycles and supports SPI serial bus. Ideal for automotive applications, this AEC-Q100 compliant memory has a small outline package with dual terminals and hardware/software write protection.

AT45DB041E-SSHN-T by Renesas Electronics is a 4Mbit NOR type flash memory with SPI serial bus, offering 100000 write/erase cycles. Operating at 3V, it has a max clock frequency of 85MHz and can withstand temperatures from -40 to 85°C. Ideal for industrial applications requiring reliable data storage in a compact package.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 4;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: NICKEL PALLADIUM GOLD;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): 40;