Sharp Corporation - PT4600

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 50 nA; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900;

PHOTO DARLINGTON; Additional Features: HIGH SENSITIVITY; SIDE VIEW; Maximum Dark Current: 250 nA; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 880; Shape: ROUND;

PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Maximum Response Time: .0000075 s; JESD-609 Code: e0;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; JESD-609 Code: e3;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 100 nA; Configuration: SINGLE;

PHOTO TRANSISTOR; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Nominal Light Current: 2 mA; No. of Functions: 12; Minimum Operating Temperature: -65 Cel;

PHOTO TRANSISTOR; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Infrared (IR) Range: YES; No. of Functions: 1; Configuration: SINGLE;

PHOTO TRANSISTOR; Peak Wavelength (nm): 940; Maximum Dark Current: 100 nA; Shape: ROUND; Minimum Operating Temperature: -25 Cel; Size: 3 mm;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 250 nA; Maximum Power Dissipation: .15 W; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000025 s; Maximum On State Current: .0001 A; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Shape: SQUARE; Maximum Operating Temperature: 100 Cel; Packing Method: TR, 13 INCH; Maximum Dark Current: 50 nA;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Additional Features: HIGH SENSITIVITY; Nominal Light Current: .18 mA; Size: 3.8 mm;

QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.

QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Peak Wavelength (nm): 880; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 100 Cel;