Semiconductors - TIP122

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 20;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Case Connection: COLLECTOR; Terminal Position: SINGLE;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-609 Code: e3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Terminal Position: SINGLE; No. of Terminals: 3;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Terminal Finish: Matte Tin (Sn);

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;

MJE3055TG by Onsemi is a NPN BJT with max. power dissipation of 75W, max. collector-emitter voltage of 60V, and max. collector current of 10A. Ideal for switching applications due to its single configuration and flange mount package style.

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;

Power Bipolar Transistors;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;