Schneider Electric Sa - BMXRMS008MP

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

AT45DB321E-SHFHC-T by Renesas Electronics is a 32MX1 flash memory with a memory density of 33554432 bits. It operates at a max clock frequency of 85 MHz and has a small outline package style. This memory IC is commonly used in industrial applications requiring high-speed data storage.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Equivalence Code: SOP16,.4;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Additional Features: IT ALSO CONFIGURED AS 256M X 1;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

S29GL01GS10DHI010 by Infineon Technologies is a 128Mx8 NAND flash memory with 1K sectors, operating at 3V. It features a 32-word page size, 100,000 write/erase cycles endurance, and asynchronous mode. Ideal for applications requiring high-density data storage in devices with low power consumption.

S29GL128S90TFI020 by Infineon Technologies is a 16MX8 NAND flash memory with 128 sectors and 3-STATE output. Operating at 3V, it offers fast access time of 90ns for applications requiring high endurance of 100,000 Write/Erase cycles. With a compact design and low standby current of 0.0001A, it is ideal for space-constrained devices needing reliable non-volatile storage.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24;

S25FL128SAGNFI003 by Infineon Technologies is a NOR flash memory with 32MX4 organization, SPI serial bus type, and 133 MHz clock frequency. It operates at -40 to 85°C, has a 3V nominal voltage, and offers 100000 write/erase cycles. Ideal for industrial applications requiring high endurance and reliable data storage in compact devices.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 12.4 mm;

MTFC4GACAJCN-1MWT by Micron Technology is a 4GX8 MLC NAND flash memory with 3.3V supply voltage, operating at -25 to 85 °C. It features a grid array package style, open-drain output, and very thin profile for applications requiring high-density storage in compact devices.

Spansion's S29GL01GS10DHI013 is a 128MX8 NOR flash memory with a package shape of square and a low profile grid array style. It operates asynchronously at a nominal voltage of 3V and has a temperature grade suitable for industrial applications. With a memory density of 1073741824 bit, it offers fast access time of 100 ns and supports data polling.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Serial Bus Type: SPI;

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Terminal Pitch: 1.27 mm;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VSON; Package Shape: RECTANGULAR; Memory Density: 33554432 bit;

S25FL128SAGMFI011 by Infineon Technologies is a NOR type Flash Memory with 32MX4 organization, operating at 133 MHz clock frequency. It has a 100000 write/erase cycle endurance and supports SPI serial bus type. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in compact devices.

SDINBDG4-8G-I2 by Western Digital is a Flash Memory with 8GX8 organization, MLC NAND type, and 3000 Write/Erase Cycles endurance. It has a memory density of 68719476736 bit and operates b/w -25 to 85 °C. Ideal for applications requiring high-density storage in compact devices.