Sanyo Semiconductor - SMA3103-TL-E

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Gain: 8 dB; JESD-609 Code: e3;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Input Power (CW): 25 dBm; Gain: 26 dB;

WIDE BAND LOW POWER; Technology: GAAS; Terminal Finish: Gold (Au); Maximum Operating Frequency: 40000 MHz; Maximum Supply Current: 100 mA; JESD-609 Code: e4;

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -55 Cel;

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 42 dBm; Maximum Voltage Standing Wave Ratio: 10; Terminal Finish: Tin (Sn); Gain: 29 dB;

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: LCC24,.16SQ,20;

NARROW BAND HIGH POWER;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3.3; Terminal Finish: TIN;

HMC565LC5TR by Analog Devices is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It has a max input power of 10 dBm and operates on a 3V supply, drawing 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

WIDE BAND MEDIUM POWER;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 79 mA; Package Equivalence Code: CAN4,.3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;