Sanyo Semiconductor - MCH6001-TL-E

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: O-PBCY-T3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Transistor Element Material: SILICON;

The NXP Semiconductors BFT92WT/R is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications in the L Band. It has a max power dissipation of 0.3W, fT of 4000MHz, and operates at up to 150°C. This surface-mount transistor features a gull wing terminal form and small outline package style.

The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; JESD-609 Code: e0;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .035 A; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .02 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;