SMBJ33CATR by Sangdest Microelectronics (Nanjing) | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	Sangdest Microelectronics (Nanjing)
Manufacturer's Part Number	SMBJ33CATR
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	SMBJ33CATR Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	YES
Maximum Reverse Current:	5 uA
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	600 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-C2
Minimum Breakdown Voltage:	36.7 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Maximum Breakdown Voltage:	40.6 V
Reverse Test Voltage:	33 V
Maximum Repetitive Peak Reverse Voltage:	33 V
Maximum Clamping Voltage:	53.3 V
JEDEC-95 Code:	DO-214AA
Minimum Operating Temperature:	-55 Cel
Diode Element Material:	SILICON
Nominal Breakdown Voltage:	38.65 V
Additional Features:	EXCELLENT CLAMPING CAPABILITY
Reference Standard:	MIL-STD-750
Peak Reflow Temperature (C):	NOT SPECIFIED

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