Samsung - K4H641638Q-LCCC

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm; No. of Words: 536870912 words;

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

IS42S32800G-7BLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has a min operating temperature of -40 °C. It is commonly used in industrial applications requiring high-speed memory access.

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm;

Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: ZIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;

Micron Technology's MT48LC16M16A2B4-7E:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and operates at 3.3V. It features self-refresh mode, very thin profile package style, and supports four bank page burst access mode. Ideal for commercial applications requiring fast data processing in a compact form factor.

Micron Technology's MT48LC8M16A2P-6A:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.

Micron Technology's MT40A512M16LY-062EAAT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 105 °C, and has a max supply voltage of 1.26 V. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; Width: 10 mm;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Length: 8 mm;

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit;

Micron Technology's MT41K256M16TW-107XIT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a grid array package style.

MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.

Micron Technology's MT48LC32M16A2P-75:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 5 ns;

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;