Samsung - K4A8G085WB-BCPB

DDR3 DRAM; No. of Terminals: 136; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Standby Current: .1 Amp;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 128MX32; Package Body Material: PLASTIC/EPOXY;

IS42S16320D-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring fast access time of 5.4ns and memory density of 536MB in a small outline package.

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Minimum Operating Temperature: -40 Cel;

NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.

Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;

Samsung's K4A4G165WF-BCTD is a 256MX16 DDR4 DRAM with 4294967296-bit memory density. Operating at 1.2V, it has a memory width of 16 and supports CMOS technology. Ideal for applications requiring high-speed data processing in devices like computers and servers due to its efficient organization and max operating temperature of 85°C.

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Width: 10.16 mm;

Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.06 V; Minimum Operating Temperature: -25 Cel;

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Ports: 1;

HYB25D512160BE-6 by Infineon Technologies is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates at a max clock frequency of 166 MHz and has a memory density of 536870912 bits. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;