K3N4U1000E-DC12 by Samsung | Vyrian | Semiconductor & Electronic Component Distributor

Image shown is a representation only.

Manufacturer	Samsung
Manufacturer's Part Number	K3N4U1000E-DC12
Description	MASK ROM; Temperature Grade: COMMERCIAL; No. of Terminals: 42; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;
Datasheet	K3N4U1000E-DC12 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.00003 Amp
Organization:	512KX16
Maximum Seated Height:	5.08 mm
Minimum Supply Voltage (Vsup):	2.7 V
Sub-Category:	MASK ROMs
Surface Mount:	NO
Maximum Supply Current:	25 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	42
No. of Words:	524288 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-PDIP-T42
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Width:	15.24 mm
Memory Density:	8388608 bit
Memory IC Type:	MASK ROM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	DIP42,.6
Alternate Memory Width:	8
Length:	52.42 mm
Maximum Access Time:	120 ns
No. of Words Code:	512K
Nominal Supply Voltage / Vsup (V):	3
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.3 V
Power Supplies (V):	3

Popular Products

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;