Rf Micro Devices - NBB-400-T1

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 5900 MHz; Characteristic Impedance: 50 ohm;

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 20000 MHz; Maximum Input Power (CW): 5 dBm; Gain: 19 dB; Minimum Operating Temperature: -55 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

NARROW BAND HIGH POWER;

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; JESD-609 Code: e3;

WIDE BAND LOW POWER; Maximum Operating Frequency: 2000 MHz; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 200 MHz; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.

BGA824N6E6327XTSA1 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 17 dB. It operates in the frequency range of 1550 MHz to 1615 MHz and can handle a max input power of 0 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 1.7; Construction: COMPONENT; Maximum Operating Frequency: 1000 MHz; Maximum Input Power (CW): 13 dBm; Gain: 10 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3; Package Equivalence Code: LCC8,.2SQ,28;

WIDE BAND LOW POWER; Minimum Operating Frequency: 1500 MHz; Maximum Voltage Standing Wave Ratio: 2.5; Maximum Operating Frequency: 8000 MHz; Gain: 20 dB; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Power Supplies (V): 5;

Analog Devices' HMC1082LP4ETR is a GaAs technology RF amplifier with 24 terminals, operating b/w -40°C to 85°C. It has a power supply of 5V and is designed for wideband medium-power applications in RF and microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting features.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Additional Features: HIGH RELIABILITY;

NARROW BAND HIGH POWER;

WIDE BAND LOW POWER; Maximum Operating Frequency: 40000 MHz; Minimum Operating Temperature: -55 Cel; Additional Features: LOW NOISE; JESD-609 Code: e4; Minimum Operating Frequency: 24000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;