Renesas Electronics - NX8570SC537-BA-A

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: .0015 V; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Semiconductor Material: InGaAs;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .095 A;

LNCT28PF01WW by Panasonic is a COMMON CATHODE 2 ELEMENTS laser diode with a peak wavelength of 661nm. It has a max forward current of 0.18A and operates b/w -10°C to 85°C. Ideal for applications requiring a rectangular-shaped laser diode with an output power of 200W, such as in medical devices or industrial equipment.

LASER DIODE; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1546; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 60 Cel; Nominal Output Power: 5000 W; Shape: RECTANGULAR; Maximum Forward Current: 9 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 875;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s;

LASER DIODE; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .3 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 80 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .0000000035 s; Maximum Forward Current: .2 A;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 850; Size: 4.5 mm; Shape: ROUND;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Spectral Bandwidth: 2 m; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1546; Maximum Forward Voltage: 2.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: 1.2 A; Peak Wavelength (nm): 1.31;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1530; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;