Renesas Electronics - NX8564LE887-CC

  1. Home
  2. Renesas Electronics - NX8564LE887-CC
NX8564LE887-CC by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8564LE887-CC
Description LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
Datasheet NX8564LE887-CC Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .15 A
Peak Wavelength (nm): 1588
Maximum Response Time: .000000000125 s
Maximum Operating Temperature: 70 Cel
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2 V
Minimum Operating Temperature: -20 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TOLD320ABA by Toshiba

TOLD320ABA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A;
SPL2Y85 by Infineon Technologies

SPL2Y85

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 850; Maximum Threshold Current: 800 mA;
SDL5030-011 by Onsemi

SDL5030-011

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
DL-LS1035 by Onsemi

DL-LS1035

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 40 Cel; Maximum Forward Current: .11 A; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel;
TOLD131R by Toshiba

TOLD131R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .105 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
NX8570SA509-CA by Renesas Electronics

NX8570SA509-CA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1551;
DL-3148-037 by Onsemi

DL-3148-037

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .05 A;
NX8571SC782D-BA by Renesas Electronics

NX8571SC782D-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1578; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel;
TOLD135A by Toshiba

TOLD135A

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .125 A; Peak Wavelength (nm): 830; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
NX8571SC6070-BA-AZ by Renesas Electronics

NX8571SC6070-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
SDL5033-101 by Onsemi

SDL5033-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 875; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
STH91008A by Infineon Technologies

STH91008A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .12 A;
TOLD80E by Toshiba

TOLD80E

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 3 m; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel;
NX6510GH by Renesas Electronics

NX6510GH

Renesas Electronics

LASER DIODE;
NX8560SJ322-BC by Renesas Electronics

NX8560SJ322-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1532;
CQF25C/D52 by NXP Semiconductors

CQF25C/D52

NXP Semiconductors

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 875; Maximum Response Time: .0000000005 s; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaAs;
SDL3034-111 by Onsemi

SDL3034-111

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel;
SDL4032-201 by Onsemi

SDL4032-201

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Semiconductor Material: GaAlAs; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
STM81004N by Infineon Technologies

STM81004N

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 5 m; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1590; Maximum Forward Current: .12 A;
SDL6030-101 by Onsemi

SDL6030-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 790; Maximum Operating Temperature: 50 Cel;