Renesas Electronics - HFA3127RZ96

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JESD-30 Code: R-PDSO-G16;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .045 W; Maximum Collector Current (IC): .01 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .75 A; JESD-30 Code: O-PRPM-F4;

MMBTH10LT1G by Onsemi is an NPN RF transistor with a max operating temperature of 150°C. It has a small outline package style and can handle a max collector-emitter voltage of 25V. This transistor is commonly used in ultra high frequency band applications.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector-Emitter Voltage: 20 V; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3.5 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 30 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;

RF Small Signal Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;

NSVMMBTH81LT3G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high frequency band up to 600 MHz with a max VCEsat of 0.5 V. This small outline package has a max collector-emitter voltage of 20V and can handle a collector current of 0.05A, making it suitable for RF signal amplification in various electronic devices.

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .3 A; Terminal Form: FLAT; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Terminal Form: THROUGH-HOLE; Maximum Collector-Emitter Voltage: 15 V;

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Reference Standard: MIL-19500; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .25 A; Terminal Form: GULL WING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: O-MBCY-W4;