Rectron - TIP110

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 100 V;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

D44H8 by Onsemi is a NPN Power BJT with 60V VCE, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. Its through-hole package makes it suitable for various electronic designs.

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum Operating Temperature: -65 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Application: SWITCHING;

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 80 V; Terminal Form: THROUGH-HOLE;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

The Onsemi MJE350 is a PNP BJT transistor with max. collector-emitter voltage of 300V and max. power dissipation of 20W. Ideal for switching applications, it has a min. DC current gain of 30 and operates at up to 150°C. Package style: Flange mount, terminals: Through-hole, finish: Sn/Pb.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 25;

2N3055G by Onsemi is a NPN Power BJT with max. power dissipation of 115W, max. collector-emitter voltage of 60V, and max. collector current of 15A. It is used for switching applications due to its single configuration and high transition frequency of 2.5MHz in a round package shape with flange mount style.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 15 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: MATTE TIN;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 5 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;