Power Innovations - TIP115

ULN2003AN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon element material.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 100; Terminal Form: THROUGH-HOLE;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

The Onsemi 2N3055H is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Package Style (Meter): FLANGE MOUNT;

TIP127TU by Onsemi is a PNP power BJT with 100V VCEO, 5A IC, and 65W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating up to 150°C, this transistor has hFE of at least 1000 for efficient performance.

TIP122 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V, hFE of 1000, and IC of 5A. Ideal for switching applications due to its high current gain and low saturation voltage. With a max power dissipation of 65W, it can handle high-power loads efficiently.

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;

MJD44H11-1G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is IN-LINE with through-hole terminals in a rectangular shape.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

MJD122G by Onsemi is a NPN Power BJT with 100V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a small outline package. Suitable for surface mount assembly with a max operating temperature of 150°C.

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Terminals: 3;