Power Innovations - BDW93C

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4 A; JESD-609 Code: e3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

BD13910STU by Onsemi is a NPN BJT transistor with 80V VCEO and 1.5A IC, ideal for switching applications. With a hFE of 63 and 13W Ptot, it operates up to 150°C making it suitable for high-power tasks in various electronic circuits. The package style is flange mount with through-hole terminals, offering ease of installation.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Package Body Material: PLASTIC/EPOXY;

BD139-16 by NXP Semiconductors is a NPN BJT transistor with 80V VCE, 1.5A IC, and 100 hFE. It is ideal for amplifier applications with a max power dissipation of 8W in a through-hole package style. Operating up to 150°C, it offers a transition frequency of 190MHz for high-performance requirements.

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;

MJE15034G by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 25;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Additional Features: LOGIC LEVEL COMPATIBLE;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15; Package Style (Meter): FLANGE MOUNT;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;