Onsemi - SDL7033-111

  1. Home
  2. Onsemi - SDL7033-111
SDL7033-111 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SDL7033-111
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 890; Maximum Operating Temperature: 50 Cel; Semiconductor Material: GaAlAs; Minimum Operating Temperature: -10 Cel;
Datasheet SDL7033-111 Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 890
Maximum Operating Temperature: 50 Cel
Semiconductor Material: GaAlAs
Sub-Category: Laser Diodes
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TOLD321ACA by Toshiba

TOLD321ACA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1310;
NX8567SA287-CC by Renesas Electronics

NX8567SA287-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1528; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
SFH4231 by Infineon Technologies

SFH4231

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 920; Minimum Operating Temperature: -40 Cel;
SDL7033-101 by Onsemi

SDL7033-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 875;
DL-4039-011 by Onsemi

DL-4039-011

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 685; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP;
NX8567SA405-BC by Renesas Electronics

NX8567SA405-BC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1540; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V;
TOLD9412(S) by Toshiba

TOLD9412(S)

Toshiba

LASER DIODE; No. of Functions: 1; Peak Wavelength (nm): 650; Nominal Output Power: 3 W;
SDL6030-001 by Onsemi

SDL6030-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 790;
TOLD322BAC by Toshiba

TOLD322BAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000001 s; Minimum Operating Temperature: 0 Cel; Maximum Forward Voltage: 1.5 V;
SDL3144-101 by Onsemi

SDL3144-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel;
NX6508GK51-AZ by Renesas Electronics

NX6508GK51-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1510; Maximum Forward Voltage: 1.6 V; Maximum Operating Temperature: 85 Cel;
SDL9952-001 by Onsemi

SDL9952-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
CQF25B/D11 by NXP Semiconductors

CQF25B/D11

NXP Semiconductors

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 850; Minimum Operating Temperature: -10 Cel;
SDL8032-201 by Onsemi

SDL8032-201

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel; Semiconductor Material: GaAlAs;
STM51004A by Infineon Technologies

STM51004A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; JESD-609 Code: e0; Peak Wavelength (nm): 1330;
NX6514EH-AZ by Renesas Electronics

NX6514EH-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Forward Current: .15 A; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550;
SDL3140-011 by Onsemi

SDL3140-011

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 790; Maximum Operating Temperature: 60 Cel;
STH81001Z by Infineon Technologies

STH81001Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V;
NX8571SC303-BA-AZ by Renesas Electronics

NX8571SC303-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1530; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
NX8570SC883D-BA-A by Renesas Electronics

NX8570SC883D-BA-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1588; Semiconductor Material: InGaAsP;