Onsemi - SDL5032

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1592; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1510; Maximum Forward Voltage: 1.6 V; Maximum Operating Temperature: 85 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1576; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1558;

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1543; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP; Peak Wavelength (nm): 640; Maximum Operating Temperature: 40 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 10 V; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 850;

LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A;

CVN63-90ECL by Osi Laser Diode is a 2.2mm ROUND LASER DIODE with 8m SPECTRAL BANDWIDTH. It features SINGLE configuration and RADIAL MOUNT, ideal for optical communication systems and medical devices requiring precise laser technology.

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Semiconductor Material: InGaAs; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .095 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 850; Spectral Bandwidth: 1 m; Semiconductor Material: AlGaAs; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1579;

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1561; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel; Maximum Response Time: .0000000003 s;

LASER DIODE; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1539;

LASER DIODE; Peak Wavelength (nm): 690; No. of Functions: 1; Nominal Output Power: 30 W;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 80 Cel;