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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | MMBV2108LT1G |
| Description | VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | MMBV2108LT1G Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Variable Capacitance Diode Classification: | ABRUPT |
| Config: | SINGLE |
| Diode Type: | VARIABLE CAPACITANCE DIODE |
| Frequency Band: | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| Sub-Category: | Varactors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Minimum Diode Capacitance Ratio: | 2.5 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Minimum Quality Factor: | 300 |
| JESD-30 Code: | R-PDSO-G3 |
| Minimum Breakdown Voltage: | 30 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Moisture Sensitivity Level (MSL): | 1 |
| Maximum Repetitive Peak Reverse Voltage: | 30 V |
| Diode Cap Tolerance: | 10 % |
| JEDEC-95 Code: | TO-236AB |
| JESD-609 Code: | e3 |
| Nominal Diode Capacitance: | 27 pF |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | .225 W |
| Additional Features: | HIGH Q, HIGH RELIABILITY |
| Peak Reflow Temperature (C): | 260 |
