Onsemi - ISL9V5036P3-F085

ISL9V5036P3-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ISL9V5036P3-F085
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 46 A; Package Style (Meter): FLANGE MOUNT;
Datasheet ISL9V5036P3-F085 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 46 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Maximum Rise Time (tr): 7000 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 2.2 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff): 13600 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 250 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 2800 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 15000 ns
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 360 V
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Gate-Emitter Voltage: 12 V
Peak Reflow Temperature (C): NOT SPECIFIED
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