Onsemi - DL-LS42

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: .1 A; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 2 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;

LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1541;

LASER DIODE; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1541; Maximum Forward Voltage: 2 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Semiconductor Material: AlGaInP; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000012 s; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1552;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 655; Semiconductor Material: AlGaInP; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 830; JESD-609 Code: e0; Semiconductor Material: GaAlAs;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 5 m; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1590; Maximum Forward Current: .12 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 2 V;

LASER DIODE; Peak Wavelength (nm): 1572; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel;

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1595; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: 15 Cel; Maximum Forward Current: .15 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel;

LASER DIODE; No. of Functions: 1; Peak Wavelength (nm): 670; Nominal Output Power: 3 W;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1583; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -30 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 670;