Onsemi - DL-3147-041

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 685; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP;

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1605;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Spectral Bandwidth: 3 m; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 810;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000001 s; Maximum Forward Current: .15 A;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000000000125 s; Maximum Forward Current: .1 A; Peak Wavelength (nm): 1590; Minimum Operating Temperature: -20 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 85 Cel;

LASER DIODE; Peak Wavelength (nm): 1558; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;

Laser Diodes;

LASER DIODE; Peak Wavelength (nm): 1543; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Maximum Threshold Current: 65 mA; Nominal Output Power: 10 W; No. of Functions: 1; Peak Wavelength (nm): 650; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .11 A;

LASER DIODE; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1585;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; No. of Functions: 1; Peak Wavelength (nm): 670; Nominal Output Power: 5 W;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Spectral Bandwidth: 3 m; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .085 A; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .075 A; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1310;

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1568;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .065 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .05 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 650; Maximum Operating Temperature: 70 Cel;