Onsemi - DL-3038-011

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel; Maximum Response Time: .000000001 s;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 80 Cel;

LASER DIODE; Peak Wavelength (nm): 670; No. of Functions: 1; Nominal Output Power: 10 W;

LASER DIODE; Maximum Forward Current: .01 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1548; Maximum Forward Voltage: 2.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .15 A; Maximum Response Time: .0000000007 s;

LASER DIODE; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1560;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel; Semiconductor Material: InGaAs;

Laser Diodes;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1549; Minimum Operating Temperature: -5 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 40 Cel; Maximum Forward Current: .06 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .055 A; Maximum Operating Temperature: 60 Cel; Semiconductor Material: GaAs; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 635; Maximum Operating Temperature: 40 Cel; Maximum Forward Current: .055 A; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .15 A; Semiconductor Material: GaAs; Minimum Operating Temperature: 0 Cel;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1554; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000002 s; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550; Spectral Bandwidth: 6 m;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1546; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Shape: RECTANGULAR; No. of Functions: 1; Minimum Operating Temperature: -20 Cel; Maximum Threshold Current: 700 mA;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .095 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 810;