NXP Semiconductors - PQC5001T

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 7 dB;

RF Power Bipolar Transistors;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): SMALL OUTLINE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 9 dB;

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F2; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 27 A; Terminal Position: DUAL;

NPN; Surface Mount: YES; Maximum Collector Current (IC): .7 A; Highest Frequency Band: L BAND; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F6;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Collector Current (IC): .06 A; No. of Terminals: 6;

NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Maximum Operating Temperature: 200 Cel; No. of Terminals: 2;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 88.8 W; Maximum Collector Current (IC): 1.35 A; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Package Shape: ROUND; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Position: DUAL; Minimum DC Current Gain (hFE): 100;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 860 MHz; Maximum Power Dissipation (Abs): 7.5 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12.5 A; Transistor Element Material: SILICON; Maximum Collector-Base Capacitance: 90 pF;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 6 A; Terminal Form: FLAT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Terminals: 2; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 2.5 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;