NXP Semiconductors - PESD15VL2BT

PESD15VL2BT by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PESD15VL2BT
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	PESD15VL2BT Datasheet

PESD15VL2BT Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Config:	COMMON CATHODE, 2 ELEMENTS
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	200 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-G3
Minimum Breakdown Voltage:	17.1 V
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Maximum Breakdown Voltage:	20.3 V
Maximum Repetitive Peak Reverse Voltage:	15 V
Maximum Clamping Voltage:	44 V
JEDEC-95 Code:	TO-236AB
JESD-609 Code:	e3
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	18.8 V
Additional Features:	ULTRA LOW LEAKAGE CURRENT
Reference Standard:	IEC-60134; IEC-61000-4-2, 4-5
Peak Reflow Temperature (C):	260

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