NXP Semiconductors - MX1011B430W

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MX1011B430W by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MX1011B430W
Description NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Highest Frequency Band: L BAND; Maximum Collector-Emitter Voltage: 20 V;
Datasheet MX1011B430W Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 6.7 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: BASE
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