NXP Semiconductors - MRFE6VP8600HR5

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: SOURCE; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Transistor Application: AMPLIFIER; Maximum Drain Current (Abs) (ID): 7 A;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Operating Temperature: 165 Cel; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Drain Current (ID): 2 A; Terminal Form: GULL WING;

STMicroelectronics PD55003S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND. This SINGLE configuration transistor comes in a PLASTIC/EPOXY package with Matte Tin finish, suitable for surface mount assembly.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 648 W; Maximum Drain Current (ID): 40 A; No. of Elements: 1;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; JESD-609 Code: e3; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74 W; JESD-30 Code: R-PDFP-F2; Package Style (Meter): FLATPACK;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Peak Reflow Temperature (C): 250; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (ID): 40 A; Maximum Drain Current (Abs) (ID): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 165 Cel; Transistor Element Material: SILICON; No. of Terminals: 2;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;