NXP Semiconductors - CQF25C/D14

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; JESD-609 Code: e0; Peak Wavelength (nm): 1330;

LASER DIODE; Peak Wavelength (nm): 1549; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .105 A; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1582; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.4 V; Peak Wavelength (nm): 635; Maximum Forward Current: .045 A; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel; Semiconductor Material: InGaAs;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.3 V; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Semiconductor Material: GaAlAs; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Response Time: .000000000125 s;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000035 s; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs;

LNCT28PF01WW by Panasonic is a COMMON CATHODE 2 ELEMENTS laser diode with a peak wavelength of 661nm. It has a max forward current of 0.18A and operates b/w -10°C to 85°C. Ideal for applications requiring a rectangular-shaped laser diode with an output power of 200W, such as in medical devices or industrial equipment.

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .115 A;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1310;

LASER DIODE; Peak Wavelength (nm): 1310; Maximum Threshold Current: 50 mA; Maximum Operating Temperature: 60 Cel; Nominal Output Power: .3 W; No. of Functions: 1;