NXP Semiconductors - BLU15/12

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.7 A; Maximum Operating Temperature: 200 Cel;

NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 2; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 32 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Terminal Position: UNSPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Minimum Power Gain (Gp): 8 dB; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 7 dB;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 8 A; JESD-30 Code: O-CXFM-F6;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBFM-P3; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 9 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 7 dB; Qualification: Not Qualified; Terminal Position: DUAL;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Minimum DC Current Gain (hFE): 15;

1090MP by Microsemi is a NPN RF Power BJT with a max power dissipation of 250W. It operates in L Band frequencies and has a max collector current of 6.5A, making it ideal for amplifier applications in various industries. This transistor comes in a ceramic-metal sealed co-fired package with flat terminals, suitable for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Maximum Operating Temperature: 200 Cel; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 8 A; Package Style (Meter): FLANGE MOUNT;