NXP Semiconductors - BLF8G27LS-150GV

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Package Style (Meter): CYLINDRICAL; Maximum Feedback Capacitance (Crss): 2.5 pF;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 18 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Minimum Power Gain (Gp): 15 dB; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-30 Code: R-CQMW-F4; Maximum Power Dissipation Ambient: 7.5 W;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; JESD-30 Code: O-PBCY-T3; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; No. of Terminals: 3; Terminal Finish: TIN LEAD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Minimum Power Gain (Gp): 10 dB; No. of Terminals: 3;

The Onsemi 2SK544D is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features a METAL-OXIDE SEMICONDUCTOR technology and operates in the VERY HIGH FREQUENCY BAND, making it suitable for high-frequency signal amplification in various electronic devices.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Highest Frequency Band: X BAND; Maximum Power Dissipation Ambient: .58 W;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; JEDEC-95 Code: TO-72;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): .03 A; Minimum DS Breakdown Voltage: 6 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W4; JESD-609 Code: e0; Maximum Feedback Capacitance (Crss): 2 pF;