NXP Semiconductors - BLF6G15L-40BRN

BLF6G15L-40BRN by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G15L-40BRN
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: QUAD; Transistor Application: AMPLIFIER;
Datasheet BLF6G15L-40BRN Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 11 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: QUAD
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-CQFM-F6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
Moisture Sensitivity Level (MSL): NOT APPLICABLE
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