NXP Semiconductors - BGU7007,115

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 18 dBm;

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

RA07N4047M-101 by Mitsubishi Electric is a RF amplifier module with max input power of 14.77 dBm and VSWR of 4. It operates in the frequency range of 400-470 MHz, ideal for narrowband high-power applications. With a temperature range from -30 to 90°C, it is suitable for various RF and microwave systems.

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; JESD-609 Code: e0; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm; Maximum Voltage Standing Wave Ratio: 1.2;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Gain: 17.3 dB;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Frequency: 145 MHz; Construction: MODULE; Maximum Operating Temperature: 110 Cel;

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Technology: GAN; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;

WIDE BAND LOW POWER; Gain: 10 dB; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Input Power (CW): 6 dBm; Maximum Operating Frequency: 40000 MHz;

The NXP Semiconductors BGU8103 is a narrow band low power RF amplifier with a gain of 14.5 dB. It operates at frequencies b/w 1559 MHz and 1610 MHz, making it suitable for applications in the RF and microwave field. Its compact surface mount package and low power consumption of 1.6 mA make it an ideal choice for various wireless communication systems.

Analog Devices' HMC7950LS6TR is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: COMPONENT;

NARROW BAND MEDIUM POWER; Minimum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Gain: 17 dB; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 15 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 40 MHz;

WIDE BAND LOW POWER;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; No. of Functions: 1; Package Equivalence Code: CAN4,.3; Maximum Supply Current: 16 mA;