NXP Semiconductors - BFU550R

BFU550R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFU550R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
Datasheet BFU550R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 11000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .45 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 60
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 16 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .72 pF
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
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