NXP Semiconductors - A5G23H110NT4

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 165 Cel; Transistor Element Material: SILICON; No. of Terminals: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 93 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (Abs) (ID): 3.9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: S BAND; No. of Elements: 2; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 648 W; Terminal Position: RADIAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V;

Wolfspeed's CGHV96050F1 is an N-CHANNEL RF FET with 100V DS Breakdown Voltage, 10.75 dB Power Gain, and operates in DEPLETION MODE. Ideal for X BAND applications like AMPLIFIERS due to its GALLIUM NITRIDE technology, FLANGE MOUNT package style, and 6A Drain Current capability.

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Maximum Drain Current (Abs) (ID): 5 A; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; No. of Terminals: 2;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;