NXP Semiconductors - A2T18S166W12SR3

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 16 A; Additional Features: HIGH RELIABILITY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Terminal Position: DUAL; Terminal Form: FLAT;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Terminal Position: DUAL; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors;

SD2931-12MR by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, suitable for Very High Frequency Band applications. Featuring a max ID of 20A and an operating mode of Enhancement Mode, this transistor has a flange mount package style and flat terminal form for easy installation in various RF power applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 120 V; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 29 A;

N-CHANNEL; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Terminal Position: QUAD; Terminal Finish: MATTE TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (ID): 1 A; Case Connection: SOURCE;

NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 2;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Additional Features: HIGH RELIABILITY; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 4 A; Maximum Drain Current (Abs) (ID): 4 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4 W; Additional Features: HIGH RELIABILITY; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;