NXP Semiconductors - A2I09VD015NR1

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 13 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

HMC499LC4 by Analog Devices is a ceramic-packaged RF amplifier with a wide band medium power capability. It operates at frequencies ranging from 21 GHz to 32 GHz, providing a gain of 9 dB. This component is suitable for surface mount applications and can handle a max input power of 20 dBm.

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 50 MHz; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 10 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;

WIDE BAND LOW POWER; Construction: COMPONENT; Additional Features: I/P POWER-MAX (PEAK)=31.76DBM; Gain: 8 dB; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -54 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;

WIDE BAND HIGH POWER; Maximum Operating Temperature: 85 Cel; Gain: 26 dB; Maximum Input Power (CW): 15 dBm; Minimum Operating Frequency: 5900 MHz; Minimum Operating Temperature: -55 Cel;

Qorvo's QPA2612 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power, VSWR of 4, and is ideal for wideband high-power applications in surface-mount configurations.

WIDE BAND LOW POWER; Maximum Operating Frequency: 40000 MHz; Minimum Operating Temperature: -55 Cel; Additional Features: LOW NOISE; JESD-609 Code: e4; Minimum Operating Frequency: 24000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Gain: 19.5 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.