NXP Semiconductors - A2G22S251-01SR3

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A2G22S251-01SR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number A2G22S251-01SR3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Peak Reflow Temperature (C): 260; Terminal Position: DUAL;
Datasheet A2G22S251-01SR3 Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 16.2 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 2
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Peak Reflow Temperature (C): 260
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