NXP Semiconductors - 934067693115

RF Small Signal Bipolar Transistors;

BFR92PE6327HTSA1 by Infineon is a NPN RF BJT transistor with max fT of 5000 MHz. It's ideal for L Band applications, featuring a max IC of 0.03 A and hFE of 70. With a package style of Small Outline, it operates up to 150 °C and has a max VCE of 15 V.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85000 MHz; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON GERMANIUM CARBON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .425 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .07 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .07 A; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6.3 W; Maximum Collector Current (IC): .2 A; Package Shape: ROUND;

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Maximum Collector-Emitter Voltage: 30 V;

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .273 W; Maximum Collector Current (IC): .025 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; Terminal Form: WIRE;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;