NXP Semiconductors - 934061965112

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 68 V; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; Peak Reflow Temperature (C): 250; Maximum Time At Peak Reflow Temperature (s): 30;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

CGH31240F by Wolfspeed is a N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it comes in a ceramic, metal-sealed co-fired package with flange mount style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 219 W; Maximum Drain Current (Abs) (ID): 16 A; Maximum Drain Current (ID): 16 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 16 A; Additional Features: HIGH RELIABILITY;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: L BAND;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Transistor Application: AMPLIFIER; No. of Elements: 2;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; No. of Terminals: 6; Package Shape: SQUARE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; Terminal Form: FLAT;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors;